Title :
Gate Current Calculations Using Spherical Harmonic Expansion of Boltzmann Equation
Author :
Jin, Seonghoon ; Wettstein, Andreas ; Choi, Woosung ; Bufler, Fabian M. ; Lyumkis, Eugeny
Author_Institution :
Synopsys Inc., Mountain View, CA, USA
Abstract :
A physics-based gate current model has been developed based on nonequilibrium electron energy distributions obtained from the spherical harmonic expansion of the Boltzmann equation. The model accounts for band structure effects, relevant microscopic scattering mechanisms, and electron injections caused by tunneling and thermionic emission processes with parallel momentum conservation and image potential barrier lowering. Obtained distribution functions and injection currents agree well with Monte Carlo simulations and experiments.
Keywords :
Boltzmann equation; Monte Carlo methods; band structure; thermionic emission; tunnelling; Boltzmann equation; Monte Carlo simulations; band structure effects; electron injections; gate current calculations; microscopic scattering mechanisms; nonequilibrium electron energy distributions; physics-based gate current model; spherical harmonic expansion; thermionic emission processes; tunneling; Acoustic scattering; Boltzmann equation; Brillouin scattering; Distribution functions; Electrons; Hot carrier injection; MOSFETs; Probability distribution; Thermionic emission; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2009.5290216
