DocumentCode
1943923
Title
Ultrafast adiabatic population transfer in p-doped semiconductor quantum wells
Author
Binder, R. ; Lindberg, M.
Author_Institution
Opt. Sci. Center, Arizona Univ., Tucson, AZ, USA
fYear
1998
fDate
8-8 May 1998
Firstpage
108
Abstract
Summary form only given.In atomic and molecular physics, coherent optical techniques allowing for almost complete ultrafast transfer of a population between different molecular eigenstates has been developed and refined for many years. One particularly successful scheme is called stimulated Raman scattering by delayed pulses (STIRAP). Within this scheme, it is possible to transfer a population between two nonoptically coupled states by using a third state (which is optically coupled to both the initial and the final state) without actually occupying it, in the end, at all. As for semiconductors, the question arises whether similar techniques can be used to transfer, for example, holes from the heavy-hole (HH) band to the light-hole (LH) band without creating electrons in the process. We have studied this problem theoretically and have identified parameter regimes where we believe the delayed-pulse scheme can be efficiently applied to the HH-LH population transfer.
Keywords
high-speed optical techniques; semiconductor quantum wells; stimulated Raman scattering; STIRAP; coherent optical technique; heavy-hole band; light-hole band; p-doped semiconductor quantum well; stimulated Raman scattering by delayed pulses; ultrafast adiabatic population transfer; Atom optics; Delay; Nonlinear optics; Optical coupling; Optical pulses; Optical scattering; Physics; Raman scattering; Stimulated emission; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
Conference_Location
San Francisco, CA, USA
Print_ISBN
1-55752-541-2
Type
conf
DOI
10.1109/IQEC.1998.680224
Filename
680224
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