Title :
Effects of Compound Formation with Dopants in TaSi2
Author :
Probst, V. ; Kabza, H. ; Goebel, H.
Author_Institution :
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 Mÿnchen 83, F.R.G.; Deparment of Integrated Circuits, Technical University Munich
Abstract :
TaB2 compound formation in TaSi2 is demonstrated by means of SEM, SIMS-and XRD analysis. This holds for B-doping of TaSi2 by means of diffusion from poly-Si as well as for direct implantation. The formation of TaAs could not yet be proven. As the mobile boron concentration level in TaSi2 is low due to the compound formation diffusion from TaSi2 into Si is rather limited.
Keywords :
Annealing; Boron; Conductivity; Doping; Heat treatment; Research and development; Silicides; Thermodynamics; Titanium; X-ray scattering;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
