• DocumentCode
    1943948
  • Title

    Nonselective W/WSix-CVD Technology for Low Resistance via Plugs on Aluminum

  • Author

    Bertagnolli, E. ; Wieczorek, C. ; Hoffmann, B. ; Schaber, H.

  • Author_Institution
    Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 Mÿnchen 83, F.R.G.
  • fYear
    1988
  • fDate
    13-16 Sept. 1988
  • Abstract
    By reducing the thermal budget of a nonselective W/WSix-CVD technology, a via tilling process completely compatible with a conventional aluminum track scheme has been obtained. A specific via resistance in the range of a few 10¿8 ¿cm2 was realized. Hillock formation was suppressed significantly. No fluorine pile-up was found at the WSix-/AlSiTi-interface so the formation of an AlF3-interlayer has been avoided successfully.
  • Keywords
    Aluminum; Filling; Metallization; Plasma applications; Plasma temperature; Plugs; Polyimides; Sputter etching; Thermal resistance; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
  • Conference_Location
    Montpellier, France
  • Print_ISBN
    2868830994
  • Type

    conf

  • Filename
    5436880
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1943948