Title :
Noise and Diffusion in p-type Silicon
Author :
Nougier, J.P. ; Moatadid, A. ; Vaissiere, J.C.
Author_Institution :
Centre d´´Electronique de Montpellier, Université des Sciences et Techniques du Languedoc, F-34060 Montpellier Cedex, France
Abstract :
The theory of the fluctuations of the state occupancy function, recently developped, together with the differential relaxation time, allow getting the transverse diffusion coefficient, which is computed in p-type Silicon, as a function of the electric field, at 300 K, from 0 to 50 kV/cm.
Keywords :
Boltzmann equation; Circuits; Distribution functions; Fluctuations; Hot carriers; Resumes; Scattering; Silicon; Steady-state;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
