DocumentCode
1943995
Title
The Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution
Author
De Orio, Roberto Lacerda ; Ceric, Hajdin ; Cervenka, Johann ; Selberherr, Siegfried
Author_Institution
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear
2009
fDate
9-11 Sept. 2009
Firstpage
1
Lastpage
4
Abstract
We investigate the influence of the statistical distribution of copper grain sizes on the electromigration time-to-failure distribution. We have applied a continuum multiphysics electromigration model which incorporates the effects of grain boundaries for stress build-up. The peak of tensile stress develops at the intersection of copper grain boundaries with the capping layer. It is shown that the electromigration lifetimes follow lognormal distributions. Moreover, the increase of the standard deviation of the grain size distribution results in an increase of the electromigration lifetimes standard deviation. The results strongly imply that the lognormal distribution of the grain sizes is a primary cause for the lognormal distribution of electromigration lifetimes.
Keywords
electromigration; log normal distribution; continuum multiphysics electromigration model; copper grain size statistics; electromigration lifetime distribution; electromigration time-to-failure distribution; lognormal distributions; statistical distribution; tensile stress; Copper; Electromigration; Grain boundaries; Grain size; Integrated circuit interconnections; Integrated circuit technology; Metallization; Microstructure; Statistical distributions; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location
San Diego, CA
ISSN
1946-1569
Print_ISBN
978-1-4244-3974-8
Electronic_ISBN
1946-1569
Type
conf
DOI
10.1109/SISPAD.2009.5290219
Filename
5290219
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