DocumentCode :
1943996
Title :
Properties of WSi2 : Ohmic Contact to N+ and P+ Si, Barrier between Al and Si, and Feasibility as First Metal in Multilevel Metallization Processes
Author :
Zhang, S.-L. ; Hammar, M. ; Johansson, T. ; Buchta, R.
Author_Institution :
Swedish institute of microelectronics, PO Box 1084, S-164 21 Kista, Sweden
fYear :
1988
fDate :
13-16 Sept. 1988
Abstract :
The electrical and chemical properties of WSi2 as well as the silicide formation have been examined with respect to applications in VLSI Si-Technology.
Keywords :
Chemicals; Conductivity; Metallization; Rough surfaces; Semiconductor films; Silicides; Substrates; Surface roughness; Temperature; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
Print_ISBN :
2868830994
Type :
conf
Filename :
5436882
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1943996
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