Diode cascade quantum well VCSEL

Author

Ebeling, K.J. ; Grabherr, M. ; Jager, R. ; Michalzik, R.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

fYear

1997

fDate

11-13 Aug. 1997

Firstpage

61

Lastpage

62

Abstract

Summary form only. In the present study we investigate diode cascade structures containing two active InGaAs quantum well layer VCSELs connected by a modulation doped backward tunnel diode. This approach of applying several diodes in series may potentially lead to a threshold current close to the transparency current and provide high differential gain but requires an enlarged operating voltage depending on the number of pn-junctions employed.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; molecular beam epitaxial growth; p-n junctions; quantum well lasers; semiconductor doping; semiconductor growth; surface emitting lasers; tunnel diodes; InGaAs; active InGaAs quantum well layer VCSELs; diode cascade quantum well VCSEL; diode cascade structures; enlarged operating voltage; high differential gain; modulation doped backward tunnel diode; pn-junctions; threshold current; transparency current; Charge carrier processes; Diodes; Epitaxial layers; Mirrors; Power generation; Quantum cascade lasers; Radiative recombination; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi

Conference_Location

Montreal, Que., Canada

Print_ISBN

0-7803-3891-X

Type

conf

DOI

10.1109/LEOSST.1997.619105

Filename

619105