Title :
Technology platform for 3-D stacking of thinned embedded dies
Author :
Iker, F. ; Soussan, P. ; Beyne, E. ; Baert, K.
Author_Institution :
IMEC, Leuven
Abstract :
This paper presents results on the process for the embedding and 3D stacking of thin dies developed at IMEC. The embedding build-up is composed of photosensitive dielectric BCB and Copper plated metal films. Successful embedding of 15 mum thick Si dies is shown and electrical connection to pads having a dimension of 35 mum is shown. Preliminary results on stacking will also be presented. Those results include removal of the Si carrier from the embedded structures. This technique can also be used for the production of thin polymer foils with embedded dies. Results on thin foil fabrication will also be reported.
Keywords :
copper; dielectric thin films; foils; integrated circuit interconnections; metallic thin films; polymer films; silicon; stacking; 3-D stacking; IMEC; Si; copper plated metal films; electrical connection; embedded structures; photosensitive dielectric BCB films; silicon carrier removal; size 15 mum; size 35 mum; thin foil fabrication; thin polymer foils production; thin silicon dies; thinned embedded dies; wafer level process; Copper; Dielectrics; Fabrication; Polymers; Power system interconnection; Production; Shape; Silicon; Stacking; Transistors;
Conference_Titel :
Electronic Components and Technology Conference, 2008. ECTC 2008. 58th
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-2230-2
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2008.4549942
