Title :
A high performance continuously tunable top-emitting VCSEL
Author :
Li, M.Y. ; Yuen, W. ; Li, G.S. ; Chang-Hasnain, C.J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
In conclusion, we report the first high performance, micromechanical tunable top-emitting AlGaAs DBR VCSEL laser that continuously tunes over 20 nm, has threshold current between 0.76 mA-1.9 mA and output power 0.92 mW-1.9 mW throughout the entire tuning range. Such a top-emitting tunable structure is highly desirable for easy optical and electrical packaging and for integration with other devices. The achieved high performance of low threshold and high power renders its practical implementation extremely feasible.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; laser tuning; micromechanical resonators; semiconductor device packaging; semiconductor lasers; surface emitting lasers; 0.76 to 1.9 mA; 0.92 to 1.9 mW; AlGaAs; continuously tunes; electrical packaging; entire tuning range; high performance; high performance continuously tunable top-emitting VCSEL; high power; laser tuning; low threshold; micromechanical tunable; optical packaging; output power; threshold current; top-emitting AlGaAs DBR VCSEL laser; top-emitting tunable structure; Distributed Bragg reflectors; Integrated optics; Laser tuning; Micromechanical devices; Optical tuning; Power generation; Power lasers; Threshold current; Tunable circuits and devices; Vertical cavity surface emitting lasers;
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
DOI :
10.1109/LEOSST.1997.619106
