High field drift domains in GaAs and InP based heterostructure field effect devices

Author

Kohn, E. ; Strähle, S. ; Geiger, D. ; Erben, U.

Author_Institution

Dept. of Electron Devices & Circuits, Ulm Univ., Germany

fYear

1993

fDate

2-4 Aug 1993

Firstpage

411

Lastpage

420

Abstract

Modelling the high field drift region of HFET´s as a drift capacitance between gate and drain in series with the gate capacitance allows one to estimate the extension of the drift region, which determines feedback and output conductance, thus relating the microwave power gain to the device structure. The technique is applied to various GaAs and InP based FET structures

Keywords

III-V semiconductors; capacitance; equivalent circuits; feedback; field effect transistors; gallium arsenide; high field effects; indium compounds; power transistors; semiconductor device models; solid-state microwave devices; space charge; GaAs; GaAs based FET structures; HFET; InP; InP based FET structures; drift capacitance; feedback; gate capacitance; heterostructure field effect devices; high field drift domains; high field drift region; microwave power gain; modelling; output conductance; Capacitance; Capacitors; Circuits; Electrons; Gallium arsenide; HEMTs; Indium phosphide; MODFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0894-8

Type

conf

DOI

10.1109/CORNEL.1993.303115

Filename

303115