DocumentCode
1944022
Title
Spatial Distribution of 1/f Noise Source
Author
Vandamme, L.K.J.
Author_Institution
Faculty of Electrical Engineering, Eindhoven University of Technology, NL-5600 M.B. Eindhoven, The Netherlands
fYear
1988
fDate
13-16 Sept. 1988
Abstract
The 1/f noise of an n-type silicon resistor has been studied under conditions ranging from accumulation to depletion at 300K. The experimental results are interpreted in terms of a bulk phenomenon and are characterized by Hooge´s empirical 1/f noise parameter ¿ with values between 10-7 and 10-5. The ¿-value for surface conduction at strong accumulation can be at least one order of magnitude larger than the value for bulk conduction.
Keywords
Electrodes; Fluctuations; Geometry; History; Manufacturing; Resistors; Semiconductor device noise; Sensor phenomena and characterization; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436883
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