Title :
Spatial Distribution of 1/f Noise Source
Author :
Vandamme, L.K.J.
Author_Institution :
Faculty of Electrical Engineering, Eindhoven University of Technology, NL-5600 M.B. Eindhoven, The Netherlands
Abstract :
The 1/f noise of an n-type silicon resistor has been studied under conditions ranging from accumulation to depletion at 300K. The experimental results are interpreted in terms of a bulk phenomenon and are characterized by Hooge´s empirical 1/f noise parameter ¿ with values between 10-7 and 10-5. The ¿-value for surface conduction at strong accumulation can be at least one order of magnitude larger than the value for bulk conduction.
Keywords :
Electrodes; Fluctuations; Geometry; History; Manufacturing; Resistors; Semiconductor device noise; Sensor phenomena and characterization; Silicon; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
