Analysis of three dimensionally confined microcavity surface emitting lasers using vector finite elements

Author

Noble, M.J. ; Lott, J.A. ; Loehr, J.P. ; Sotirelis, P.

Author_Institution

Dept. of Electr. & Comput. Eng., Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA

fYear

1997

fDate

11-13 Aug. 1997

Firstpage

67

Lastpage

68

Abstract

This new finite element method model is expected to be valuable for the design of microcavity devices. It can be used to optimize optical mode control by examining changes of size, shape, number, and location of native oxide layers. It may also be combined with semiconductor gain calculations to determine the higher-order mode suppression level for various microcavity surface emitting laser designs. Finally, it may be used to analyze VCSEL lasing and spontaneous emission near-field structure. This information is of considerable importance in the design of optical interconnect and communication systems.

Keywords

finite element analysis; laser cavity resonators; laser modes; laser theory; optical design techniques; optical transmitters; semiconductor device models; semiconductor lasers; spontaneous emission; surface emitting lasers; VCSEL lasing; finite element method model; higher order mode suppression level; microcavity device design; microcavity surface emitting laser designs; native oxide layers; optical communication systems; optical interconnect designs; optical mode control optimisation; optical transmitters; semiconductor gain calculations; spontaneous emission near-field structure; three dimensionally confined microcavity surface emitting lasers; vector finite elements; Finite element methods; Laser modes; Microcavities; Optical control; Optical design; Semiconductor lasers; Shape control; Size control; Stimulated emission; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi

Conference_Location

Montreal, Que., Canada

Print_ISBN

0-7803-3891-X

Type

conf

DOI

10.1109/LEOSST.1997.619108

Filename

619108