Title :
Microcavity LEDs with an overall efficiency of 4% into a numerical aperture of 0.5
Author :
Bockstaele, R. ; Sys, C. ; Blondelle, J. ; De Neve, H. ; Croussaert, F. ; Dhoedt, B. ; Moerman, I. ; Van Daele, P. ; Baets, R.
Author_Institution :
INTEC-Dept., Gent Univ., Belgium
Abstract :
Summary form only given. Microcavity LEDs were optimised for optical interconnect requirements. Overall quantum efficiency of up to 4.3% into a numerical aperture of 0.5 and a FWHM beam divergence angle of 105 degrees at a drive current of 1 mA was achieved. Microcavity LEDs with one gold and one GaAs-AlAs DBR-mirror have been optimized for efficiency into a limited NA of 0.5. Simulations indicate that an efficiency of 8% can be achieved. Experimental devices give a best value of 3.7%.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; mirrors; optical interconnections; optical resonators; optimisation; 3.7 percent; 4 percent; 4.3 percent; 8 percent; FWHM beam divergence angle; GaAs-AlAs; GaAs-AlAs DBR-mirror; drive current; limited NA; microcavity LEDs; numerical aperture; optical interconnect requirements; overall efficiency; overall quantum efficiency; Apertures; Distributed Bragg reflectors; Gallium arsenide; Gold; Indium gallium arsenide; Light emitting diodes; Microcavities; Mirrors; Optical interconnections; Optical reflection;
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
DOI :
10.1109/LEOSST.1997.619109
