DocumentCode
1944110
Title
Model-based comparison of RF noise in oscillating diamond and SiC MESFETs
Author
Bilbro, G.L. ; Shin, M.W. ; Trew, R.J. ; Riddle, A.N.
Author_Institution
North Carolina State Univ., Raleigh, NC, USA
fYear
1993
fDate
2-4 Aug 1993
Firstpage
458
Lastpage
467
Abstract
We report a simulation study of RF oscillator noise including 1/f noise and incomplete activation in diamond and silicon carbide MESFETs oscillating in resonant circuits that maximize power at the load
Keywords
Schottky gate field effect transistors; elemental semiconductors; oscillators; radiofrequency oscillators; random noise; semiconductor device models; semiconductor device noise; semiconductor materials; silicon compounds; simulation; 1/f noise; C; RF noise; SiC; diamond; model-based comparison; oscillating MESFETs; oscillator noise; resonant circuits; Circuit noise; Circuit simulation; MESFETs; Microwave circuits; Microwave oscillators; Predictive models; RLC circuits; Radio frequency; Semiconductor device noise; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location
Ithaca, NY
Print_ISBN
0-7803-0894-8
Type
conf
DOI
10.1109/CORNEL.1993.303118
Filename
303118
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