DocumentCode :
1944140
Title :
High power single transverse mode selectively oxidized VCSELs
Author :
Choquette, K.D. ; Hou, H.Q. ; Hadley, G.R. ; Geib, K.M. ; Mathes, D. ; Hull, R.
Author_Institution :
Center for Compound Semicond. Technol., Sandia Nat. Labs., Albuquerque, NM, USA
fYear :
1997
fDate :
11-13 Aug. 1997
Firstpage :
73
Lastpage :
74
Abstract :
In summary, a tapered oxide layer positioned at a field null produces reduced optical confinement and optical loss, in spite of large thickness, and maintains efficient electrical confinement. In this manner the optical and electrical confinement derived from the buried oxide can be decoupled for design of specific vertical surface emitting laser (VCSEL) performance, such as enabling high single transverse mode output power.
Keywords :
laser cavity resonators; laser modes; optical losses; oxidation; semiconductor lasers; surface emitting lasers; VCSEL; buried oxide; efficient electrical confinement; electrical confinement; field null; high power single transverse mode selectively oxidized VCSELs; high single transverse mode output power; large thickness; optical confinement; optical loss; reduced optical confinement; specific vertical surface emitting laser; tapered oxide layer; Apertures; Carrier confinement; Distributed Bragg reflectors; Laboratories; Optical design; Optical losses; Oxidation; Power generation; Stimulated emission; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
Type :
conf
DOI :
10.1109/LEOSST.1997.619111
Filename :
619111
Link To Document :
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