Title :
Thermal runaway analysis of high power AlGaAs/GaAs heterojunction bipolar transistors
Author :
Liou, L.L. ; Bayraktaroglu, B. ; Huang, C.I.
Author_Institution :
Wright Lab., Solid State Electron. Directorate, Wright-Patterson Air Force Base, OH, USA
Abstract :
Thermal runaway study of multiple emitter AlGaAs/GaAs power HBTs using an analytical electro-thermal model is described. Thermal runaway causes the fatal destruction of the device under the voltage modulation mode of operation, and thermally-induced current instability of the device under the current modulation mode of operation. The kinetic relation between the thermal runaway and junction temperature rise is studied. The HBT power handling capabilities in relation to the device thermal resistance and ballasting schemes are discussed
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; power transistors; semiconductor device models; thermal analysis; thermal resistance; AlGaAs-GaAs; analytical electro-thermal model; ballasting schemes; current modulation mode; device thermal resistance; heterojunction bipolar transistors; high power devices; junction temperature rise; multiple emitter device; power HBTs; power handling capabilities; thermal runaway analysis; thermally-induced current instability; voltage modulation mode; Analytical models; Conducting materials; Electric resistance; Electronic ballasts; Gallium arsenide; Heterojunction bipolar transistors; Temperature dependence; Thermal force; Thermal resistance; Voltage;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303120
