DocumentCode :
1944168
Title :
Single-mode vertical-cavity surface-emitting laser with cavity induced antiguiding
Author :
Oh, T.-H. ; Huffaker, D.L. ; MacDaniel, M.R. ; Deppe, D.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fYear :
1997
fDate :
11-13 Aug. 1997
Firstpage :
75
Lastpage :
76
Abstract :
In summary, we present a device design that incorporates to our knowledge the first cavity induced antiguiding on the lasing mode. Compared to other oxide confined InGaAs DBR QW VCSELs of this size, the antiguided device shows a large area stable near-field of 10 /spl mu/m diameter. We expect that once the resistance is reduced, the structure will show lowest order mode operation over a wide dynamic range.
Keywords :
distributed Bragg reflector lasers; laser cavity resonators; laser modes; laser stability; oxidation; quantum well lasers; surface emitting lasers; waveguide lasers; 10 mum; InGaAs; antiguided device; cavity induced antiguiding; large area stable near-field; lasing mode; lowest order mode operation; oxide confined InGaAs DBR QW VCSELs; single-mode vertical-cavity surface-emitting laser; wide dynamic range; Distributed Bragg reflectors; Laser modes; Mirrors; Optical pumping; Optical scattering; Oxidation; Resonance; Surface emitting lasers; Vertical cavity surface emitting lasers; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
Type :
conf
DOI :
10.1109/LEOSST.1997.619112
Filename :
619112
Link To Document :
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