DocumentCode
1944207
Title
High Performance Schottky Diode and FET on InP
Author
Loualiche, S. ; Ginoudi, A. ; Haridon, H.L. ; Salvi, M. ; Corre, A. Le ; Lecrosnier, D. ; Favennec, P.N.
Author_Institution
Centre National d´´Etudes des Télécommunications LAB/OCM/TOH, BP 40, F-22301 Lannion Cedex, France
fYear
1988
fDate
13-16 Sept. 1988
Abstract
A high performance Schottky diode has been realized on InP by a special surface treatment. The diode reaches a breakdown voltage of 60 V and the reverse current remains at 0.6 ¿A for 30 V reverse voltage. The best device shows a reverse current of 0.2 nA at 1 V voltage with an ideality factor of 1.54. The Schottky has been used as a gate in the fabrication of FETs on InP by ion implantation and CBE. A transconductance of 140 mS/mn has been obtained on a 3 ¿m gate length FET in the frist experimental trial without any optimisaton.
Keywords
FETs; Fabrication; Indium phosphide; Optical materials; Schottky diodes; Semiconductor diodes; Semiconductor materials; Temperature; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436891
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