Title :
Two layer stepped-QW channel HFETs on InP-substrate
Author :
Strähle, S. ; Henle, B. ; Mittermeier, E. ; Erben, U. ; Rees, P.K. ; Kohn, E.
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ., Germany
Abstract :
A novel HFET structure on InP containing an asymmetric two layer stepped QW channel sandwiched between two InAlAs barriers is proposed. A small bandgap InGaAs channel hosts the 2DEG-density and provides a low sheet resistance at low drain field. A higher bandgap sub channel of (a) InP and (b) InGaAs/InAlAs superlattice is designed to act as high field drift layer. This approach allows to obtain high fmax/ft -ratios and high output power at high speed. First results are given
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; power transistors; semiconductor quantum wells; semiconductor superlattices; two-dimensional electron gas; 2DEG; AlInAs-InGaAs-InP; HFET structure; HFETs; InAlAs barriers; InGaAs channel; InP; InP-substrate; asymmetric two layer stepped QW channel; heterostructure FET; high field drift layer; high output power; high speed operation; low sheet resistance; quantum well channel; superlattice; Electron devices; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Knee; MODFETs; Photonic band gap; Power generation; Superlattices;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303123
