Depletion and Enhancement Mode Si3 N4 GaInAs MISFETs with No Current Drift

N-channel depletion and enhancement mode MISFETs with no drain current drift have been fabricated on Ga0.47In0.53 As epitaxial structures grown by low pressure MOVPE. These devices use a passivation process which includes removal of native oxide from GaInAs surface followed by a Si3N4 film deposition, both steps performed using multipolar plasmas. Depletion and enhancement mode MISFETs (Lg = 2¿m, W = 200,¿m) exhibit an extrinsic transconductance of 140 and 150 mS/mm, respectively. No drain current drift is observed in 10⁵ s for both types of devices due to the efficiency of the passivation process and especially to the absence of oxide at the interface.