DocumentCode :
1944257
Title :
A 1.6-watt high efficiency X-band power MMIC
Author :
Avasarala, M. ; Day, D.S. ; Hua, C. ; Chan, S. ; Basset, J.R.
Author_Institution :
Avantek Inc., Santa Clara, CA, USA
fYear :
1989
fDate :
22-25 Oct. 1989
Firstpage :
263
Lastpage :
266
Abstract :
The design and performance of a two-stage molecular-beam-epitaxial (MBE) monolithic power amplifier chip are presented. The MMIC (monolithic microwave integrated circuit) contains full interstage matching, partial matching at the input, and no match at the output. When matched to 50 Omega at input and output using off-chip circuitry, the MMIC demonstrated best overall performance of 32.1 dBm (0.450 W/mm), 33.4%, and 13.2 dB of power, power-added-efficiency (PAE), and associated gain, respectively, across the 8.3-10.7-GHz band. The PAE was as high as 36% in parts of the band. The average performance for 23 devices from 8 wafers from 3 different runs, across the 8.5-10.5-GHz band, was 31.6 dBm (0.430 W/mm), 30%, and 13.1 dB. The chip size is 0.074 in.*0.043 in.*0.003 in. (1.88 mm*1.09 mm).<>
Keywords :
MMIC; field effect integrated circuits; microwave amplifiers; power amplifiers; power integrated circuits; 1.6 W; 13.2 dB; 30 to 36 percent; 8.3 to 10.7 GHz; FET; SHF; X-band; full interstage matching; high efficiency; molecular-beam-epitaxial; monolithic microwave integrated circuit; monolithic power amplifier chip; partial input matching; power MMIC; two stage design; Assembly; Circuits; Costs; FETs; Fingers; Impedance matching; MMICs; Phased arrays; Power amplifiers; Size control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
Type :
conf
DOI :
10.1109/GAAS.1989.69339
Filename :
69339
Link To Document :
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