Strained layer device epitaxy on patterned substrates [MODFETs]

Author

Schaf, W.J. ; Hur, K.Y. ; Eastman, L.F. ; Compton, R.C. ; Mandeville, P.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

fYear

1993

fDate

2-4 Aug 1993

Firstpage

504

Lastpage

510

Abstract

The growth of pseudomorphic MODFET structures on a patterned substrate was investigated as a means of increasing the critical layer thickness of strained layers. Prior to growth, semi-insulating GaAs substrates were patterned and etched using chemically assisted ion beam etching to define a series of mesas. Double-doped pseudomorphic MODFET layers were then grown on the substrates by molecular beam epitaxy. To fabricate MODFETs on the resulting non-planar wafer, a new fabrication technique has been developed

Keywords

gallium arsenide; high electron mobility transistors; molecular beam epitaxial growth; semiconductor growth; sputter etching; GaAs; MBE; chemically assisted ion beam etching; critical layer thickness; double-doped layers; fabrication technique; mesas; molecular beam epitaxy; nonplanar wafer; patterned substrates; pseudomorphic MODFET structures; semi-insulating GaAs substrates; strained layer device epitaxy; Chemicals; Epitaxial growth; Etching; Fabrication; Gallium arsenide; HEMTs; Ion beams; MODFETs; Molecular beam epitaxial growth; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0894-8

Type

conf

DOI

10.1109/CORNEL.1993.303124

Filename

303124