DocumentCode :
1944276
Title :
Benchmarking the Accuracy of PCA Generated Statistical Compact Model Parameters Against Physical Device Simulation and Directly Extracted Statistical Parameters
Author :
Cheng, B. ; Moezi, N. ; Dideban, D. ; Roy, G. ; Roy, S. ; Asenov, A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
fYear :
2009
fDate :
9-11 Sept. 2009
Firstpage :
1
Lastpage :
4
Abstract :
Statistical variability is a major challenge for CMOS scaling and integration. In order to achieve variability aware design, it´s critical important to reliably transfer device characteristics statistical variability information into compact models. A PCA based statistical compact modeling strategy is benchmarked against ´atomistic´ device simulation and direct statistical parameter extraction strategy. The results indicate that PCA based approach may introduce considerable error in tail of distribution, which in turn may generate pessimistic or optimistic conclusions in statistical circuit simulation.
Keywords :
MOSFET; circuit simulation; nanotechnology; statistical analysis; CMOS scaling; PCA generated statistical compact model parameters; atomistic device simulation; direct statistical parameter extraction strategy; nMOSFET device; physical device simulation; statistical circuit simulation; statistical variability; transfer device characteristics; Circuit simulation; Electronic mail; MOSFET circuits; Parameter extraction; Principal component analysis; Probability distribution; Semiconductor device modeling; Semiconductor process modeling; Silicon; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
ISSN :
1946-1569
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
Type :
conf
DOI :
10.1109/SISPAD.2009.5290230
Filename :
5290230
Link To Document :
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