In Situ Processing of InP by Flash LPCVD for Surface Preparation and Gate Oxide Deposition

Silicon dioxide films deposited on InP substrates are obtained in a reduced pressure, air and water cooled CVD reactor, with a rapid thermal heating. It is shown that a 700°C temperature flash results in Si02 deposition rates close to 100 A/sec. High temperature deposition (700°C) is thus obtained in few seconds on InP substrates without any surface damage. These layers display excellent electrical properties well suited for MISFET applications. Improvement of the interface properties of this structure is obtained by flowing silane on the InP substrate prior to oxide deposition. interface studies show that silane reduces the InP native oxides.