Output Impedance Frequency Dispersion and Low Frequency Noise in GaAs MESFETs

L´Investigation tralte de la relation entre brult g-r et la dispersion de fréquence de I´impédance de sortle GaAs MESFET. On a employé une nouvelle technique pour I´identification des nlveaux profonds qui sont responsable du brult et de la dispersion. La dépendance du bials de la dispersion fut également investiguée et un modéle constant aux simulations en deux dimensions est presenté. The interrelation between g-r noise and output impedance frequency dispersion in GaAs MESFET´s has been investigated. A new technique to identify the deep levels responsible for the dispersion is used. It is found that same traps are responsible for both noise and dispersion. The bias dependence of the dispersion was also investigated and a model is presented which is consistent with 2-D simulations.