Title :
The impact of process parameters on the fracture of device structures during chip joining on organic laminates
Author :
Sylvestre, Julien ; Blander, Alexandre ; Oberson, Valerie ; Perfecto, Eric ; Srivastava, Kamalesh
Author_Institution :
Syst. & Technol. Group, IBM Corp., Armonk, NY
Abstract :
Detailed observations of the impact of various process parameters on the fracture of brittle structures in low-k dielectric flip chips assembled on organic laminates using lead-free metallurgies are reported. Specifically, a simple model is first presented to evaluate the stresses transmitted to the chip back end of line structures which are susceptible to failure during the reflow at chip joining. These stresses are regulated by creep deformation, so that damage to the chip can be controlled by carefully engineering the creep properties of the solder joints. We introduce new experimental techniques to monitor the creep behaviour of the joints during the reflow. In particular, we describe the use of a laser interferometer technique to monitor the chip curvature with a high sampling rate (few Hz) throughout the reflow. It is shown that these measurements can be used to predict the likelihood of causing brittle fracture in the chip structures. Additionally, we present electron backscatter diffraction (EBSD) data for the microstructure of a large number of solder joints. Using a combination of these theoretical and experimental observations, we derive a complete phenomenology for brittle fractures in the chip during the reflow. The creep-limited stresses are a strong function of solder joint plastic strain rates, which in turn are a strong function of cooling rates during the reflow. Creep properties are also a strong function of the solder metallurgy: reducing the silver content in the SnAgCu alloys results in a higher propensity for creep and correspondingly lower stresses. Thermal treatments at high temperature, such as annealing, can affect the characteristics of the intermetallic compounds, resulting in different creep properties. These trends are observed as the limiting behaviour of the relatively large number of solder joints in typical flip chip packages, but due to the small size of the solder joints (approximately 100 mum in diameter), significant variabilit- y is observed from joint to joint in the interconnect array. We link this variability to the joint microstructure by showing that the size and orientation of the few grains generally forming these joints influence the risk to cause damage in the chip.
Keywords :
annealing; brittle fracture; copper alloys; creep; electron backscattering; electron diffraction; flip-chip devices; grain size; laminates; light interferometry; low-k dielectric thin films; organic compounds; plastic deformation; reflow soldering; semiconductor device packaging; silver alloys; solders; stress analysis; tin alloys; SnAgCu; annealing; chip curvature monitoring; chip joining process; cooling rates; creep deformation; creep-limited stresses; electron backscatter diffraction data; flip chip packages; grain orientation; grain size; intermetallic compound characteristics; laser interferometer technique; lead-free metallurgies; low-k dielectric flip chips assembly; organic laminates; process parameters impact; reflow process; semiconductor device brittle fractures; solder joint microstructure; solder joint plastic strain rates; solder joint properties; solder metallurgy; stress evaluation; thermal treatments; Assembly; Creep; Dielectrics; Environmentally friendly manufacturing techniques; Flip chip; Laminates; Lead; Microstructure; Soldering; Stress;
Conference_Titel :
Electronic Components and Technology Conference, 2008. ECTC 2008. 58th
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-2230-2
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2008.4549954