Title :
Predictive Compact Modeling for Strain Effects in Nanoscale Transistors
Author :
Xu, Nuo ; Sun, Xin ; Wang, Lynn ; Neureuther, Andrew ; Liu, Tsu-Jae King
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Abstract :
A compact MOSFET I-V model is developed based on quasi-ballistic transport theory, using a more accurate method to calculate the effective stress and its impact on all strain-dependent parameters. This model is verified using published 40 nm-Lg CESL-strained nMOSFET data, and can be used to predict layout-dependent variations and future-generation device performance trends.
Keywords :
MOSFET; nanoelectronics; semiconductor device models; stress analysis; MOSFET I-V model; effective stress; layout-dependent variation; nanoscale transistors; predictive compact modeling; quasiballistic transport theory; size 40 nm; strain effects; Backscatter; Capacitive sensors; Compressive stress; Electronic mail; Electrons; MOSFET circuits; Parameter extraction; Predictive models; Sun; Tensile stress;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2009.5290232
