DocumentCode
1944331
Title
Half Micrometer N-MOS Technology Using X-Ray Lithography
Author
Lauer, V. ; Bauer, F. ; Korec, J. ; Huber, H.-L. ; Balk, P.
Author_Institution
Institute of Semiconductor Electronics, Aachen Technical University, D-5100 Aachen, FRG
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
83
Lastpage
86
Abstract
MOSFETs with effective channel lengths down to 0.3 ¿=m have been realized using x-ray lithography. To determine process parameters for device optimization two dimensional process and device modeling was employed. In addition, ring oscillators with different numbers of stages were fabricated to evaluate the performance of this technology.
Keywords
Boron; Circuits; Fabrication; Implants; Inverters; MOS devices; MOSFETs; Ring oscillators; Stability; X-ray lithography;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436897
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