Title :
p+-thin surface layer Schottky-barrier enhanced high speed pseudomorphic Al0.25Ga0.75As/In0.15 Ga0.85As and Ga0.5In0.5P/In0.15Ga0.85As MODFETs
Author :
Dickmann, J. ; Berg, M. ; Hackbarth, Th. ; Deufel, R. ; Daembkes, H. ; Scholz, F. ; Moser, M.
Author_Institution :
Res. Center, Daimler-Benz AG, Ulm, Germany
Abstract :
In this paper we report on our investigation of the introduction of a highly p-doped very thin surface layer in combination with GaInP as the wide bandgap material in order to improve the breakdown voltage of GaAs based pseudomorphic MODFETs without deteriorating other device performances. In order to proof the quality of this approach we compare the device performance of the new device with that of a conventional AlGaAs/InGaAs MODFET also having a p+-surface layer. The device performances of AlGaAs/InGaAs and GaInP/InGaAs devices with 1.8 μm gate length are, gmmax=224mS/mm, 200mS/mm, IDSmax =300mA/mm, 400 mA/mm, VBrDG (IG=1 mA/mm)=10 V, 14 V, fT=15 GHz, 12 GHz, fmax=59 GHz, 42 GHz, respectively
Keywords :
Schottky effect; aluminium compounds; electric breakdown of solids; gallium arsenide; heavily doped semiconductors; high electron mobility transistors; indium compounds; solid-state microwave devices; 1.8 micron; 10 V; 12 to 59 GHz; 14 V; 200 mS/mm; 224 mS/mm; Al0.25Ga0.75As-In0.15Ga0.85As; Ga0.5In0.5P-In0.15Ga0.85As; GaAs based devices; GaInP wide bandgap material; MM-wave devices; MODFETs; breakdown voltage; high speed pseudomorphic devices; highly p-doped layer; p+-thin surface layer; p+-thin surface layer Schottky-barrier; pseudomorphic MODFETs; Gallium arsenide; HEMTs; Indium gallium arsenide; Insulation; MODFETs; Molecular beam epitaxial growth; Photonic band gap; Semiconductor materials; Substrates; Transmitters;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303127
