DocumentCode
1944334
Title
p+-thin surface layer Schottky-barrier enhanced high speed pseudomorphic Al0.25Ga0.75As/In0.15 Ga0.85As and Ga0.5In0.5P/In0.15Ga0.85As MODFETs
Author
Dickmann, J. ; Berg, M. ; Hackbarth, Th. ; Deufel, R. ; Daembkes, H. ; Scholz, F. ; Moser, M.
Author_Institution
Res. Center, Daimler-Benz AG, Ulm, Germany
fYear
1993
fDate
2-4 Aug 1993
Firstpage
529
Lastpage
538
Abstract
In this paper we report on our investigation of the introduction of a highly p-doped very thin surface layer in combination with GaInP as the wide bandgap material in order to improve the breakdown voltage of GaAs based pseudomorphic MODFETs without deteriorating other device performances. In order to proof the quality of this approach we compare the device performance of the new device with that of a conventional AlGaAs/InGaAs MODFET also having a p+-surface layer. The device performances of AlGaAs/InGaAs and GaInP/InGaAs devices with 1.8 μm gate length are, gmmax=224mS/mm, 200mS/mm, IDSmax =300mA/mm, 400 mA/mm, VBrDG (IG=1 mA/mm)=10 V, 14 V, fT=15 GHz, 12 GHz, fmax=59 GHz, 42 GHz, respectively
Keywords
Schottky effect; aluminium compounds; electric breakdown of solids; gallium arsenide; heavily doped semiconductors; high electron mobility transistors; indium compounds; solid-state microwave devices; 1.8 micron; 10 V; 12 to 59 GHz; 14 V; 200 mS/mm; 224 mS/mm; Al0.25Ga0.75As-In0.15Ga0.85As; Ga0.5In0.5P-In0.15Ga0.85As; GaAs based devices; GaInP wide bandgap material; MM-wave devices; MODFETs; breakdown voltage; high speed pseudomorphic devices; highly p-doped layer; p+-thin surface layer; p+-thin surface layer Schottky-barrier; pseudomorphic MODFETs; Gallium arsenide; HEMTs; Indium gallium arsenide; Insulation; MODFETs; Molecular beam epitaxial growth; Photonic band gap; Semiconductor materials; Substrates; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location
Ithaca, NY
Print_ISBN
0-7803-0894-8
Type
conf
DOI
10.1109/CORNEL.1993.303127
Filename
303127
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