• DocumentCode
    19444
  • Title

    Future Prospects of Widebandgap (WBG) Semiconductor Power Switching Devices

  • Author

    Shenai, Krishna

  • Author_Institution
    LoPel Corp., Naperville, IL, USA
  • Volume
    62
  • Issue
    2
  • fYear
    2015
  • fDate
    Feb. 2015
  • Firstpage
    248
  • Lastpage
    257
  • Abstract
    Electrical power switching devices based on widebandgap (WBG) semiconductors have the potential for transformative impact on a wide range of energy conversion applications. Significantly improved electrical and thermal conductivities of WBG semiconductors compared with the semiconductor silicon have the potential for more efficient, compact, and robust power conversion systems. However, to offset inherently higher manufacturing cost of WBG power devices and obtain system-level benefits, power converters need to be operated at higher semiconductor chip junction temperatures and/or at higher switching frequencies. This paper discusses the future prospects of WBG-based power electronics by considering the current state of the art of WBG chip manufacturing, packaging, and thermal management technologies.
  • Keywords
    electrical conductivity; elemental semiconductors; power convertors; power semiconductor switches; silicon; thermal conductivity; thermal management (packaging); wide band gap semiconductors; Si; WBG semiconductors; WBG-based power electronics; electrical conductivity; electrical power switching devices; energy conversion; power conversion systems; power converters; semiconductor chip junction temperatures; semiconductor power switching device; semiconductor silicon; thermal conductivity; thermal management technology; widebandgap semiconductors; Logic gates; MOSFET; Silicon; Silicon carbide; Stress; Temperature measurement; Threshold voltage; Cost; high-frequency switching; junction temperature; manufacturing; material defects; packaging; thermal management; widebandgap (WBG); widebandgap (WBG).;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2014.2360641
  • Filename
    6940285