DocumentCode
1944449
Title
Electron Beam Direct Write Effects on CMOS Devices
Author
Barlow, K.
Author_Institution
Plessey Research Caswell Ltd., Caswell, Towcester, Northants, GB-NN12 8EQ, Great-Britain
fYear
1988
fDate
13-16 Sept. 1988
Abstract
Electron beam exposure effects on metallised MOS devices have been studied. The results show that exposure leads to the generation of interface traps and positive oxide charge that can be almost completely removed using low temperature annealing (450°). However, bulk oxide traps generated during exposure are only partly removed by the anneal and this leads to an increased trapping efficiency, which can seriously degrade MOS device integrity.
Keywords
Annealing; Degradation; Electron beams; Electron traps; Hydrogen; Lead compounds; Leakage current; MOS devices; Temperature; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436900
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