Electron Beam Direct Write Effects on CMOS Devices

Electron beam exposure effects on metallised MOS devices have been studied. The results show that exposure leads to the generation of interface traps and positive oxide charge that can be almost completely removed using low temperature annealing (450°). However, bulk oxide traps generated during exposure are only partly removed by the anneal and this leads to an increased trapping efficiency, which can seriously degrade MOS device integrity.