Title :
A Mobility Model for MOSFET Device Simulation
Author :
Walker, A.J. ; Woerlee, P.H.
Author_Institution :
Philips Research Laboratories, NL-5600 JA Eindhoven, The Netherlands
Abstract :
The device characteristics of sub-micron MOS transistors depend strongly on the mobility of the charge carriers in the inversion layer. A new low lateral field mobility model for the normal field dependence will be presented. Good agreement was found between the predicted and measured mobilities for a large variety of samples. The model was successfully incorporated into a two - dimensional device simulation program which gave predictions agreeing well with experimental data.
Keywords :
Charge carrier processes; Charge carriers; Doping; MOSFET circuits; Particle scattering; Predictive models; Rough surfaces; Semiconductor process modeling; Silicon; Surface roughness;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
