Investigation of the Noise Performance of Double-Gate MOSFETs by Deterministic Simulation of the Boltzmann Equation

Author

Hong, Sung-Min ; Jungemann, Christoph

Author_Institution

EIT4, Bundeswehr Univ., Neubiberg, Germany

fYear

2009

fDate

9-11 Sept. 2009

Firstpage

1

Lastpage

4

Abstract

Noise performance of a double-gate MOSFET is investigated by deterministic simulation of the Boltzmann equation. The fully-coupled scheme of the Boltzmann equation and Poisson equation enables both, rapid convergence of the Newton-Raphson method and noise analysis. In contrast to Monte Carlo noise simulation, it is possible to determine the spatial origin of the terminal current noise. It is confirmed that the larger part of the terminal current noise stems from the source side.

Keywords

Boltzmann equation; MOSFET; Monte Carlo methods; Newton-Raphson method; Poisson equation; Boltzmann equation; Monte Carlo noise simulation; Newton-Raphson method; Poisson equation; deterministic simulation; double-gate MOSFET; noise analysis; noise performance; terminal current noise; Boltzmann equation; Convergence; Distribution functions; Electric potential; Electrons; MOSFETs; Monte Carlo methods; Newton method; Poisson equations; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on

Conference_Location

San Diego, CA

ISSN

1946-1569

Print_ISBN

978-1-4244-3974-8

Electronic_ISBN

1946-1569

Type

conf

DOI

10.1109/SISPAD.2009.5290240

Filename

5290240