Title :
Monte-Carlo Ion Implantation and Composite
Author :
Barthel, A. ; Lorenz, J. ; Ryssel, H.
Author_Institution :
Fraunhofer-Arbeitsgruppe fÿr Integrierte Schaltungen, Artilleriestrasse 12, D-8520 Erlangen, Germany
Abstract :
Analytical methods for the description of ion implantation show good agreement with experiment and Monte-Carlo simulations in most cases. Problems arise with special geometries such as trenches. To be able to simulate implantation and diffusion in such cases, a Monte-Carlo interface has been added to the process simulation program COMPOSITE.
Keywords :
Analytical models; Boltzmann equation; Computational modeling; Convolution; Geometry; Ion implantation; Nonhomogeneous media; Physics computing; Semiconductor process modeling; Silicon;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
