• DocumentCode
    1944644
  • Title

    Monte-Carlo Ion Implantation and Composite

  • Author

    Barthel, A. ; Lorenz, J. ; Ryssel, H.

  • Author_Institution
    Fraunhofer-Arbeitsgruppe fÿr Integrierte Schaltungen, Artilleriestrasse 12, D-8520 Erlangen, Germany
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    457
  • Lastpage
    460
  • Abstract
    Analytical methods for the description of ion implantation show good agreement with experiment and Monte-Carlo simulations in most cases. Problems arise with special geometries such as trenches. To be able to simulate implantation and diffusion in such cases, a Monte-Carlo interface has been added to the process simulation program COMPOSITE.
  • Keywords
    Analytical models; Boltzmann equation; Computational modeling; Convolution; Geometry; Ion implantation; Nonhomogeneous media; Physics computing; Semiconductor process modeling; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436910
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1944644