Title :
GaSb and GaInAsSb Photodetectors for λ ≫ 1.55 μm Prepared by Metal Organic Chemical Vapor Deposition
Author :
Bougnot, G. ; Pascal, F. ; Roumanille, F. ; Bougnot, J. ; Gouskov, L. ; Delannoy, F. ; Grosse, P. ; Luquet, H.
Author_Institution :
Centre d´´Electronique de Montpellier (CNRS-UA 391), Universit? des Sciences et Techniques du Languedoc, Place Eug?ne Bataillon, F-34060 Montpellier Cedex, France
Abstract :
p and n GaSb layers have been grown on GaSb and semi-insulating GaAs substrates by Metal Organic Chemical Vapor Deposition (MOCVD) method ; the lowest doping levels obtained are: p = 2 × 1016cm-3, n = 8 × 1015cm-3. P type Ga1-xinxAsySb1-y layers have also been fabricated by MOCVD with a composition insuring the photodetection at a wavelength of 2.5μm. The properties of the layers and of the as grown junctions are described.
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
