• DocumentCode
    1944687
  • Title

    GaSb and GaInAsSb Photodetectors for λ ≫ 1.55 μm Prepared by Metal Organic Chemical Vapor Deposition

  • Author

    Bougnot, G. ; Pascal, F. ; Roumanille, F. ; Bougnot, J. ; Gouskov, L. ; Delannoy, F. ; Grosse, P. ; Luquet, H.

  • Author_Institution
    Centre d´´Electronique de Montpellier (CNRS-UA 391), Universit? des Sciences et Techniques du Languedoc, Place Eug?ne Bataillon, F-34060 Montpellier Cedex, France
  • fYear
    1988
  • fDate
    13-16 Sept. 1988
  • Abstract
    p and n GaSb layers have been grown on GaSb and semi-insulating GaAs substrates by Metal Organic Chemical Vapor Deposition (MOCVD) method ; the lowest doping levels obtained are: p = 2 × 1016cm-3, n = 8 × 1015cm-3. P type Ga1-xinxAsySb1-y layers have also been fabricated by MOCVD with a composition insuring the photodetection at a wavelength of 2.5μm. The properties of the layers and of the as grown junctions are described.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
  • Conference_Location
    Montpellier, France
  • Print_ISBN
    2868830994
  • Type

    conf

  • Filename
    5436912
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1944687