Title :
Resonant Injection Enhanced Field Effect Transistor for Low Voltage Switching: Concept and Quantum Transport Simulation
Author :
Chen, Hui ; Register, L.F. ; Banerjee, S.K.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
Abstract :
A Resonant Injection Enhanced Field Effect Transistor (RIEFET) device concept for low voltage switching has been developed. Two-dimensional electrostatically self-consistent ballistic quantum transport simulations of device operation are provided. To reduce simulation time, the two dimensional ballistic transport code was parallelized. The potential significance of parasitic phonon-assisted transport also is explored in quasi-one-dimensional simulations of transport through the resonant barrier.
Keywords :
ballistic transport; electrostatics; field effect transistor switches; resonant tunnelling transistors; semiconductor device models; 2D electrostatically self-consistent ballistic quantum transport simulations; low voltage switching; parallelization; parasitic phonon-assisted transport; quasione-dimensional simulations; resonant barrier; resonant injection enhanced field effect transistor; resonant tunneling transistor; Dielectrics; FETs; Geometry; III-V semiconductor materials; Low voltage; MOSFET circuits; Microelectronics; Resonance; Resonant tunneling devices; Threshold voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2009.5290247
