DocumentCode
1944748
Title
Characterization of an AlGaAs/GaAs Metal-Semiconductor-Metal Photodetector
Author
Zirngibl, M. ; Sachot, R. ; Ilegems, M.
Author_Institution
Institut de Micro- and Optoélectronique, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland
fYear
1988
fDate
13-16 Sept. 1988
Abstract
Checharacteristics of metal-semiconductor-metal photodetectors as a function of layout geometry, applied voltage and optical input power are reported. The structures are fabricated using interdigitated indium tin oxide Schottky contacts deposited by sputtering on GaAs substrates and MBE-layers to form the active area. The detectors show high external quantum efficency and fast response (risetime ≪ 70 ps, FWHM ≪ 185 ps).
Keywords
Detectors; Fingers; Gallium arsenide; High speed optical techniques; Indium tin oxide; Optical sensors; Photoconductivity; Photodetectors; Schottky barriers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436914
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