Title :
Characterization of an AlGaAs/GaAs Metal-Semiconductor-Metal Photodetector
Author :
Zirngibl, M. ; Sachot, R. ; Ilegems, M.
Author_Institution :
Institut de Micro- and Optoélectronique, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland
Abstract :
Checharacteristics of metal-semiconductor-metal photodetectors as a function of layout geometry, applied voltage and optical input power are reported. The structures are fabricated using interdigitated indium tin oxide Schottky contacts deposited by sputtering on GaAs substrates and MBE-layers to form the active area. The detectors show high external quantum efficency and fast response (risetime ≪ 70 ps, FWHM ≪ 185 ps).
Keywords :
Detectors; Fingers; Gallium arsenide; High speed optical techniques; Indium tin oxide; Optical sensors; Photoconductivity; Photodetectors; Schottky barriers; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
