Title :
Statistical Analysis of Implant Angles Effects on Asymmetrical NMOSFETs Characteristics and Reliability
Author :
Dars, P. ; d´Ouville, T.Ternisien ; Mingam, H. ; Merckel, G.
Author_Institution :
CNET-CNS, BP 98, F-38243 Meylan Cedex, France
Abstract :
Statistical analysis of asymmetry in LDD NMOSFETs electrical characteristics shows the influence of implantation angles on non-overlap variation observed on devices realized on a 100 mm wafer and within the wafers of a batch. The study of the consequence of this dispersion on the aging behaviour illustrates the importance of this parameter for reliability and the necessity to take it in account for accurate analysis of stress results.
Keywords :
Aging; Automatic testing; Dispersion; Electrostatic analysis; Fabrication; Implants; MOS devices; MOSFETs; Statistical analysis; Stress;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
