Losses of insulated gate bipolar transistor in HF resonant converters

The authors investigate the operational limitations of insulated-gate bipolar transistors (IGBTs) in HF resonant converters. The analysis takes into consideration the thermal balance and the maximum current density achieved by the IGBTs in resonant converters. The major resonant subcircuits are described, and the duality rules allowing these circuits to replace other configurations are discussed. A practical circuit is presented, emphasizing driving and protection to achieve the maximum performance of the IGBT in resonant converters.<>