High Frequency Base resistance and the Representation of Two and Three-Dimensional AC and DC Emitter and Base Current Flow of Bipolar Transistors

The high frequency base resistance, input impedance and current flows of bipolar transistors are simulated using a quasi three-dimensional (3D) representation of the device. It is found that the reduction in base resistance as well as the 3D current flows of non-walled transistors cannot be properly simulated using standard distributed equivalent circuits. A parallel connected equivalent circuit is proposed for improved high frequency modeling of non-walled devices.