Title :
A Low Voltage Steep Turn-Off Tunnel Transistor Design
Author :
Patel, Pratik ; Jeon, Kanghoon ; Bowonder, Anupama ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Abstract :
A new tunneling transistor structure is introduced that offers several advantages over prior designs. Notably, tunneling area is substantially increased. Turn on/off swing is improved by engineering doping profile to ensure tunneling initiates in high electric field region. TCAD simulations explore the critical design considerations. The concept of heterojunction tunneling is introduced as a means to achieve low effective band gap and low voltage operation for the design in consideration.
Keywords :
low-power electronics; technology CAD (electronics); tunnel transistors; TCAD; heterojunction tunneling; low effective band gap; low voltage operation; tunneling transistor; Computational modeling; Degradation; Doping profiles; Electrons; Energy consumption; Heterojunctions; Low voltage; MOSFETs; Photonic band gap; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2009.5290257
