Title :
Unified Model for Bipolar Transistors Including the Voltage and Current Dependence of the Base and Collector Resistances as Well as the Breakdown Limits
Author :
Hébert, F. ; Roulston, D.J.
Author_Institution :
Avantek Inc., Advanced Bipolar Products, 39201 Cherry Street, Newark, CA 94560, U.S.A.
Abstract :
A unified bipolar transistor model, which takes into account the variation of the base and collector resistances with emitter-base voltage, collector-base voltage and collector current, as well as the voltage dependence of the base charge and the avalanche breakdown, is presented. The agreement between computer simulations and experiments is shown to be very good.
Keywords :
Avalanche breakdown; Bipolar transistors; Breakdown voltage; Computer simulation; Conductivity; Current density; Integrated circuit modeling; Predictive models; Resumes; Semiconductor process modeling;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
