Title :
Monolithic integration of AlInGaAs DS-DBR tunable laser and AlInGaAs MZ modulator with small footprint, low power dissipation and long-haul 10Gb/s performance
Author :
Ward, A.J. ; Hill, Victoria ; Cush, Rosie ; Heck, Susannah C. ; Firth, Paul ; Honzawa, Youichi ; Uchida, Yasuo
Author_Institution :
Oclaro Technol. Ltd., Towcester, UK
Abstract :
A monolithically integrated tunable ILMZ device is presented which uses AlInGaAs in both the laser and MZ regions. This allows high temperature operation and low VS, giving power dissipation of less than 1.6W at a levelled power output of 0.5dBm. Transmission performance at 10Gb/s consistent with long-haul operation is also presented.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; integrated optoelectronics; laser tuning; optical modulation; quantum well lasers; AlInGaAs-AlInGaAs; DS-DBR tunable laser; MZ modulator; bit rate 10 Gbit/s; high temperature operation; levelled power output; long-haul operation; long-haul performance; low power dissipation; monolithically integrated tunable ILMZ device; transmission performance;
Conference_Titel :
Optical Communication (ECOC 2013), 39th European Conference and Exhibition on
Conference_Location :
London
Electronic_ISBN :
978-1-84919-759-5
DOI :
10.1049/cp.2013.1582
