Title :
On the Feasibility of 500 GHz Silicon-Germanium HBTs
Author :
Pawlak, A. ; Schroter, Michael ; Krause, J. ; Wedel, G. ; Schroter, Michael ; Jungemann, C.
Author_Institution :
CEDIC, Dresden Univ. of Technol., Dresden, Germany
Abstract :
A procedure for rapid TCAD based evaluation of device design alternatives is presented. It employs 1D device simulation in combination with a physics-based compact model and a corresponding model generator. This enables to provide libraries with geometry scalable models for mm-wave circuit optimization. Based on an experimentally calibrated baseline the procedure is applied to demonstrate the feasibility of SiGe HBTs with (fT, fmax) (420,520) GHz at realistic vertical and lateral dimensions. The proposed method is suitable for improving the existing ITRS 2007 SiGe HBT roadmap towards emerging mm-wave applications.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave devices; semiconductor device models; technology CAD (electronics); 1D device simulation; SiGe; frequency 500 GHz; geometry scalable model; mm-wave circuit optimization; physics-based compact model; rapid TCAD procedure; silicon-germanium HBT; Circuit simulation; Circuit synthesis; Doping profiles; Geometry; Germanium silicon alloys; Heterojunction bipolar transistors; Semiconductor process modeling; Silicon germanium; Solid modeling; Space technology;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2009.5290258
