DocumentCode
1945049
Title
Growth of strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors
Author
Wada, M. ; Araki, S. ; Kudou, T. ; Ueda, T.
Author_Institution
Optoelectronics Lab., Yokogawa Electr. Corp., Tokyo, Japan
Volume
1
fYear
2001
fDate
15-19 July 2001
Abstract
This report discusses the growth of new strain-balanced InAsP, InP, and InGaAs multiple quantum well structures with +2.0% strained InAsP wells, InP barriers, and -2.0% strained InGaAs layers for mid-infrared quantum well infrared photodetectors.
Keywords
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; infrared detectors; optical fabrication; semiconductor quantum wells; vapour phase epitaxial growth; InAsP-InP-InGaAs; mid-IR quantum well photodetectors; mid-infrared photodetectors; multiple quantum well structures; strain-balanced; strained InAsP wells; strained InGaAs layers; trip barriers; Capacitive sensors; Indium gallium arsenide; Indium phosphide; Infrared detectors; Laboratories; Lattices; Photodetectors; Quantum well devices; Satellites; Scanning electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.967956
Filename
967956
Link To Document