Overview of Modeling Approaches for Scaled Non Volatile Memories

The success of non-volatile memory (NVM) in the last two decades have relied on the relentless downscaling of MOS-based Flash devices. Entering the 2X nm technology, the physical scaling of Flash memories will have to face potential reliability and feasibility showstoppers. To understand the ultimate scaling limits of the Flash technology and to evaluate alternative memory concepts, physically-based models able to describe small-size effects and non-silicon-based materials are required. This work reviews recent developments and open issues of Flash and postFlash modeling, discussing physical mechanisms in reliability and operation and highlighting the challenges in the understanding of non-silicon active materials for phase change memory (PCM) and resistive-switching memory (RRAM) devices.