Near-infrared intersubband absorption as short as 1.6 /spl mu/m in ZnSe/BeTe type-II quantum wells

Author

Akimoto, R. ; Kinpara, Y. ; Akita, K. ; Sasaki, F. ; Kobayashi, S.

Author_Institution

Electrotechnical Lab., Ibaraki, Japan

Volume

1

fYear

2001

fDate

15-19 July 2001

Abstract

We report photoinduced electron intersubband absorption in ZnSe/BeTe type-II superlattices. The wavelength of the intersubband transition as short as 1.6 /spl mu/m, covering the 1.55 /spl mu/m in optical communication wavelengths within its absorption band width (/spl sim/ 250nm), is achieved in the ZnSe/BeTe SLs with 4.5-ML-thick ZnSe layers.

Keywords

II-VI semiconductors; beryllium compounds; carrier relaxation time; electron-phonon interactions; infrared spectra; optical pumping; photoluminescence; semiconductor quantum wells; zinc compounds; 1.6 micron; Frohlich interaction; ZnSe-BeTe; conduction band offset; electron-hole pairs; ground confined hole state; high structural quality; near-infrared intersubband absorption; optical communication wavelengths; photoinduced electron intersubband absorption; photoluminescence; pump photon energy; quantum confinement effect; type-II quantum wells; Absorption; Conducting materials; Electrons; Indium gallium arsenide; Laser sintering; Optical fiber communication; Probes; Quantum cascade lasers; Semiconductor materials; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on

Conference_Location

Chiba, Japan

Print_ISBN

0-7803-6738-3

Type

conf

DOI

10.1109/CLEOPR.2001.967958

Filename

967958