DocumentCode
1945088
Title
Measurement of Minority-Carrier Lifetime and Interface Recombination Velocities in p-i-n Diodes, from High Frequency Response of a Bipolar JFET Structure
Author
Vitale, G. ; Spirito, P.
Author_Institution
Dept. of Electronic Engineering, University of Napoli, Via Claudio 21, I-80125 Napoli, Italy
fYear
1988
fDate
13-16 Sept. 1988
Abstract
A new method to measure the minority-carrier recombination lifetime in the low-doped layer of a p-i-n diode, and its emitter recombination current, is presented. The method is based on the measurement of the cutoff frequency of a three terminal device structure, similar to a vertical JFET, that incorporates the diode under test. The paper displays the basic theory of the measurement and some experimental results.
Keywords
Current measurement; Cutoff frequency; Frequency measurement; Frequency response; P-i-n diodes; Photovoltaic cells; Plasma measurements; Spontaneous emission; Testing; Velocity measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436930
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