A circuit model of bipolar mode field effect transistor (BMFET)

Author

Busatto, G. ; Vitale, G.F.

Author_Institution

IRECE-CNR, Naples, Italy

fYear

1989

fDate

1-5 Oct. 1989

Firstpage

1205

Abstract

A circuit model of the bipolar-mode field-effect transistor (BMFET) that is based on a novel formulation of its charge control model is presented. The circuit obtained describes both unipolar and bipolar modes of operation of the BMFET and is presented in a form suitable for incorporation in circuit CAD (computer-aided-design) simulators, thus allowing the design of circuits that incorporate this new device. The authors also present the implementation of the model in the latest versions of SPICE2, which offers the possibility of modifying the device subroutines. They report that even though new nonlinear elements have been introduced into the SPICE routines, no convergence problems have been observed.<>

Keywords

bipolar transistors; circuit CAD; digital simulation; insulated gate field effect transistors; semiconductor device models; BMFET; SPICE2; bipolar mode field effect transistor; charge control model; circuit CAD; circuit model; computer-aided-design; simulators; unipolar mode; Algorithms; Circuit simulation; Design automation; Equations; Equivalent circuits; FETs; Insulated gate bipolar transistors; MOSFETs; Physics; Steady-state;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1989., Conference Record of the 1989 IEEE

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/IAS.1989.96796

Filename

96796