Title :
A circuit model of bipolar mode field effect transistor (BMFET)
Author :
Busatto, G. ; Vitale, G.F.
Author_Institution :
IRECE-CNR, Naples, Italy
Abstract :
A circuit model of the bipolar-mode field-effect transistor (BMFET) that is based on a novel formulation of its charge control model is presented. The circuit obtained describes both unipolar and bipolar modes of operation of the BMFET and is presented in a form suitable for incorporation in circuit CAD (computer-aided-design) simulators, thus allowing the design of circuits that incorporate this new device. The authors also present the implementation of the model in the latest versions of SPICE2, which offers the possibility of modifying the device subroutines. They report that even though new nonlinear elements have been introduced into the SPICE routines, no convergence problems have been observed.<>
Keywords :
bipolar transistors; circuit CAD; digital simulation; insulated gate field effect transistors; semiconductor device models; BMFET; SPICE2; bipolar mode field effect transistor; charge control model; circuit CAD; circuit model; computer-aided-design; simulators; unipolar mode; Algorithms; Circuit simulation; Design automation; Equations; Equivalent circuits; FETs; Insulated gate bipolar transistors; MOSFETs; Physics; Steady-state;
Conference_Titel :
Industry Applications Society Annual Meeting, 1989., Conference Record of the 1989 IEEE
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/IAS.1989.96796
